Title:
FERROMAGNETIC TUNNEL JUNCTION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2011/062005
Kind Code:
A1
Abstract:
Disclosed is a ferromagnetic tunnel junction element which is capable of reducing the current value necessary for writing both in a magnetic field writing type MRAM and in a spin injection magnetization reversal type MRAM. Specifically disclosed is a ferromagnetic tunnel junction element (1) which has a structure wherein a ferromagnetic free layer (2) that is composed of one or more layers including a ferromagnetic layer, an insulating layer (3), and a ferromagnetic fixed layer (4) that is composed of a plurality of layers including a ferromagnetic layer are sequentially laminated. The ferromagnetic free layer (2) contains an additional element, which has a function of decreasing the saturation magnetization of the ferromagnetic free layer (2), more in the side that is not in contact with the insulating layer (3) than in the side that is in contact with the insulating layer (3).
Inventors:
ONO TAKUYA (JP)
Application Number:
PCT/JP2010/067510
Publication Date:
May 26, 2011
Filing Date:
October 06, 2010
Export Citation:
Assignee:
FUJI ELECTRIC HOLDINGS (JP)
ONO TAKUYA (JP)
ONO TAKUYA (JP)
International Classes:
H01L43/08; H01F10/16; H01F10/32; H01L21/8246; H01L27/105; H01L29/82; H01L43/12
Foreign References:
| JP2009239052A | 2009-10-15 | |||
| JP2008198792A | 2008-08-28 | |||
| JP2008103661A | 2008-05-01 | |||
| JP2009081314A | 2009-04-16 | |||
| JP2008227388A | 2008-09-25 |
Attorney, Agent or Firm:
OKUYAMA, Shoichi et al. (JP)
Okuyama In addition, it is 1. (JP)
Okuyama In addition, it is 1. (JP)
Download PDF: