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Title:
FIELD-EFFECT TRANSISTOR ARRAY AND MULTI-MODULE HETEROGENEOUS CHIP
Document Type and Number:
WIPO Patent Application WO/2023/202147
Kind Code:
A1
Abstract:
The present invention relates to the technical field of chips. Disclosed are a field-effect transistor array and a multi-module heterogeneous chip. The field-effect transistor array comprises a plurality of field-effect transistors, which are connected in parallel, wherein source electrodes of the plurality of field-effect transistors are connected to a power supply, drain electrodes of the plurality of field-effect transistors are connected to a load, on-resistance of the field-effect transistors has a positive temperature coefficient effect, and gate electrodes of the field-effect transistors are respectively electrically connected to control and adjustment ports. According to the field-effect transistor array and the multi-module heterogeneous chip in the embodiments of the present invention, by means of a positive temperature coefficient effect of on-resistance of field-effect transistors, when the power of a certain region is relatively large and the temperature thereof increases, on-resistance of a field-effect transistor in the region increases, and a current passing through the field-effect transistor decreases, whereas a current passing through field-effect transistors which are distributed in a region having a relatively low temperature increases, such that the temperature increases, thereby achieving the effects of dynamic power adjustment and temperature balance. Moreover, a gate voltage of the field-effect transistor array is changed by means of control and adjustment ports, such that the magnitude of a current that passes through the field-effect transistor array can be controlled.

Inventors:
YAN ZHIYU (CN)
WANG LIEYANG (CN)
XU HONG (CN)
CHEN HUOLI (CN)
ZHAN LIANYANG (CN)
LI SHA (CN)
Application Number:
PCT/CN2022/142871
Publication Date:
October 26, 2023
Filing Date:
December 28, 2022
Export Citation:
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Assignee:
ZHUHAI ORBITA AEROSPACE SCIENCE&TECHNOLOGY CO LTD (CN)
International Classes:
H01L25/16; H02H9/02
Domestic Patent References:
WO2017221292A12017-12-28
Foreign References:
CN114825296A2022-07-29
JP2010283973A2010-12-16
CN105550432A2016-05-04
CN113507201A2021-10-15
CN210007689U2020-01-31
Attorney, Agent or Firm:
JIAQUAN IP LAW (CN)
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