Title:
FIELD-EFFECT TRANSISTOR CAPABLE OF SELF-RECOVERY AGAINST RADIATION DAMAGE AND DAMAGE RECOVERY SYSTEM THEREOF
Document Type and Number:
WIPO Patent Application WO/2017/217620
Kind Code:
A1
Abstract:
A damage recovery system of a field-effect transistor according to the present invention comprises: a field-effect transistor including a substrate, a source and a drain formed on the substrate, a channel formed between the source and the drain, an insulating film formed on the channel, and two gate electrodes formed on the insulating film; and a controller for recovering damage of the insulating film by applying a predetermined range of voltage to the two gate electrodes to generate joule heating. As such, because the damage recovery system can self-recover damages caused by radiation, the life of a transistor operating in a radiation environment can be remarkably extended, malfunctions can be reduced, and an operation time can be prolonged. This can lead to a reduction in the economic costs of satellite, space, defense industries, etc.
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Inventors:
CHOI YANG KYU (KR)
PARK JUN YOUNG (KR)
PARK JUN YOUNG (KR)
Application Number:
PCT/KR2016/014134
Publication Date:
December 21, 2017
Filing Date:
December 02, 2016
Export Citation:
Assignee:
KOREA ADVANCED INST SCI & TECH (KR)
International Classes:
H01L29/78; H01L21/324; H01L21/66; H01L29/423
Foreign References:
| KR100841365B1 | 2008-06-26 | |||
| US20150318848A1 | 2015-11-05 | |||
| US20120108045A1 | 2012-05-03 | |||
| KR20110005531A | 2011-01-18 | |||
| US20140334227A1 | 2014-11-13 |
Other References:
PARK, JUN-YOUNG ET AL.: "Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection", IEEE TRANSACTION ON ELECTRON DEVICES, vol. 63, no. 3, 18 January 2016 (2016-01-18), pages 910 - 915, XP011600233, ISSN: 0018-9383
PARK, JUN-YOUNG ET AL.: "Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs", IEEE ELECTRON DEVICE LETTERS, vol. 37, no. 7, 2 June 2016 (2016-06-02), pages 843 - 846, XP011615183, ISSN: 0741-3106
PARK, JUN-YOUNG ET AL.: "Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs", IEEE ELECTRON DEVICE LETTERS, vol. 37, no. 7, 2 June 2016 (2016-06-02), pages 843 - 846, XP011615183, ISSN: 0741-3106
Attorney, Agent or Firm:
KIM, Sung Ho (KR)
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