Title:
FIELD EFFECT TRANSISTOR AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2021/106190
Kind Code:
A1
Abstract:
According to the present invention, a gate electrode (114) is provided with: a main part (114b) that is configured from a gate electrode material; and a barrier layer (114a) that is arranged between the main part (114b) and a blocking layer (104), while being configured from a conductive material that prevents diffusion of the gate electrode material into the blocking layer (104). The surface of the main part (114b) in a region above a first insulating layer (109a) faces the surroundings without being provided with a layer of a conductive material.
More Like This:
| JP2006066713 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| JP4957686 | Semiconductor device |
| WO/2011/135896 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME |
Inventors:
TSUTSUMI TAKUYA (JP)
MATSUZAKI HIDEAKI (JP)
MATSUZAKI HIDEAKI (JP)
Application Number:
PCT/JP2019/046766
Publication Date:
June 03, 2021
Filing Date:
November 29, 2019
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01L21/336; H01L21/338; H01L29/778; H01L29/78; H01L29/812
Foreign References:
| JP2013131650A | 2013-07-04 | |||
| JPH0496337A | 1992-03-27 | |||
| JP2014199864A | 2014-10-23 | |||
| JP2000183077A | 2000-06-30 | |||
| JP2014003231A | 2014-01-09 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
Download PDF: