Title:
FIELD EFFECT TRANSISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/151690
Kind Code:
A1
Abstract:
The present application provides a field effect transistor and a preparation method therefor, and relates to the technical field of semiconductor devices. The method comprises: providing a first device structure comprising a substrate and an epitaxial layer arranged on the substrate, and sequentially forming a first dielectric layer, a polycrystalline silicon layer and a second dielectric layer; removing parts of the polycrystalline silicon layer and the second dielectric layer to define a first window above doped regions, the first dielectric layer being exposed out of the bottom of the first window; retaining a third dielectric layer on the side wall of the first window to define a second window, the epitaxial layer being exposed out of the bottom of the second window; forming an ohmic metal layer on the surface of the bottom of the second window to form a fourth device structure; and forming a front metal layer on the surface, away from the substrate, of the fourth device structure.
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Inventors:
HE ZHIQIANG (CN)
CAI WENBI (CN)
TAO YONGHONG (CN)
ZHANG ZHONGHUA (CN)
LI LIJUN (CN)
WU YIQING (CN)
CAI WENBI (CN)
TAO YONGHONG (CN)
ZHANG ZHONGHUA (CN)
LI LIJUN (CN)
WU YIQING (CN)
Application Number:
PCT/CN2023/075800
Publication Date:
August 17, 2023
Filing Date:
February 14, 2023
Export Citation:
Assignee:
HUNAN SANAN SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L21/335; H01L29/06
Domestic Patent References:
| WO2019000416A1 | 2019-01-03 |
Foreign References:
| CN112736126A | 2021-04-30 | |||
| CN112786679A | 2021-05-11 | |||
| CN213752715U | 2021-07-20 |
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (CN)
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