Title:
FIELD EMISSION TYPE COLD CATHODE AND PRODUCTION METHOD THEREFOR AND FLAT IMAGE DEVICE PROVIDED WITH FIELD EMISSION TYPE COLD CATHODE
Document Type and Number:
WIPO Patent Application WO/2003/009327
Kind Code:
A1
Abstract:
A field emission type cold cathode drivable at low voltage and a production method therefor, and a flat image device provided with a field emission type cold cathode. An insulating layer (3) and a gate layer (4) are laminated on a conductive layer (2) formed on a glass substrate (1), and an opening (5) is formed in the insulating layer (3) and the gate layer (4). Then, portions other than the opening (5) and the side surfaces of the opening (5) are covered with a mask material (6), and a carbon nano−tube layer working as an emitter material is deposited. The mask material (6) is etched and, at the same time, the carbon nano−tube layer above it is lifted off to form an emitter layer (7) consisting of carbon nano−tube on the bottom surface only of the opening (5).
Inventors:
ITO FUMINORI (JP)
Application Number:
PCT/JP2002/007228
Publication Date:
January 30, 2003
Filing Date:
July 16, 2002
Export Citation:
Assignee:
NEC CORP (JP)
ITO FUMINORI (JP)
ITO FUMINORI (JP)
International Classes:
H01J1/304; H01J9/02; H01J29/04; H01J31/12; (IPC1-7): H01J9/02; H01J1/30; H01J31/12
Foreign References:
| JPH1031954A | 1998-02-03 | |||
| JP2001043790A | 2001-02-16 | |||
| JP2001167690A | 2001-06-22 | |||
| JP2000348600A | 2000-12-15 | |||
| JP2000353466A | 2000-12-19 | |||
| JP2000353467A | 2000-12-19 |
Attorney, Agent or Firm:
Maruyama, Takao c/o Maruyama, Patent Office (SAM Build. 3floor 38-23, Higashi-Ikebukuro 2-chom, Toshima-ku Tokyo, JP)
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