FILM FORMATION DEVICE

WIPO Patent Application WO/2022/230072

A1

Provided is a film formation device which controls plasma.　This film formation device is provided with: a reactive gas supply unit for supplying a reactive gas to a first chamber; a source gas supply unit for supplying a source gas to a second chamber; a first plasma mechanism for generating inductively coupled plasma which activates the reactive gas; a second plasma mechanism for generating capacitively coupled plasma which activates the reactive gas activated by the first plasma mechanism, and the source gas; and a control unit, wherein the second plasma mechanism includes: an upper electrode; a lower electrode which pairs with the upper electrode; a first high-frequency power source which applies a high-frequency wave to the upper electrode via a first matching device; a second high-frequency power source which applies a high-frequency wave to the upper electrode via a second matching device; and a third matching device which is connected to the lower electrode, the third matching device including a variable capacitor.

PARK TAEHOON (KR)
WON JAIHYUNG (KR)
LEE NAEIL (KR)
PARK JINHYUNG (KR)
BAIK CHOONKUM (KR)
LIM HYONAM (KR)

PCT/JP2021/016854

November 03, 2022

April 27, 2021

Click for automatic bibliography generation  

TOKYO ELECTRON LTD (JP)

H01L21/31

WO2009005148A1

2009-01-08

JP2015019065A	2015-01-29
JP2016145385A	2016-08-12
JP2013251546A	2013-12-12
JP2011124295A	2011-06-23
JP2003119564A	2003-04-23
JP2020155387A	2020-09-24
US10593518B1	2020-03-17

ITOH, Tadashige et al. (JP)

View/Download PDF      PDF Help

Previous Patent: STEEL WELDED MEMBER

Next Patent: MOTOR DRIVE DEVICE COMPRISING FAN MOTOR AND METHOD FOR CONTROLLING MOTOR DRIVE DEVICE