Title:
FILM FORMATION METHOD AND FILM FORMATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/264887
Kind Code:
A1
Abstract:
In this film formation method, during sputter treatment in which a selected target selected from among a plurality of targets is subjected to sputtering, a film formation device performs a selected-side reciprocal action in which a magnet disposed on the selected target is caused to move reciprocally in parallel with a direction of extension of the selected target. Moreover, in this film formation method, along with the selected-side reciprocal action, at least one of the following is performed: an unselected-side reciprocal action, in which a magnet disposed on an unselected target not subjected to sputtering is caused to move in parallel with a direction of extension of the unselected target; or a distancing action, in which the magnet is caused to move away from the unselected target.
Inventors:
SHIMADA ATSUSHI (JP)
Application Number:
PCT/JP2022/023013
Publication Date:
December 22, 2022
Filing Date:
June 07, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
C23C14/35; C23C14/14; C23C14/34; H01L43/08; H01L43/12
Foreign References:
| JP2012201971A | 2012-10-22 | |||
| JP2016164287A | 2016-09-08 | |||
| JP2021025125A | 2021-02-22 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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