Title:
FILM FORMATION METHOD, ELECTRONIC DEVICE PRODUCTION METHOD, AND FILM FORMATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/058613
Kind Code:
A1
Abstract:
Provided is a film formation method and an application thereof, the method comprising: a step for preparing a stepped substrate, which is a substrate having a step in the substrate thickness direction; and a film formation step for discharging an ink from an inkjet head to supply the ink onto at least the top surface of the step of the stepped substrate, blowing air on to the ink which has come into contact with the top surface of the step to form a film that covers at least the top surface and the side surfaces of the step,
Inventors:
MAEDA KOTARO (JP)
SAWANO MITSURU (JP)
FUJII YUSUKE (JP)
KYOSO TADASHI (JP)
SAWANO MITSURU (JP)
FUJII YUSUKE (JP)
KYOSO TADASHI (JP)
Application Number:
PCT/JP2022/037011
Publication Date:
April 13, 2023
Filing Date:
October 03, 2022
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
B05D1/26; B05D1/28; B05D3/00; B05D3/04; B05D7/00; B05D7/24; B41M5/00; C08F2/48; C08F20/00; H05K3/10; H05K3/28
Foreign References:
| JP2013110315A | 2013-06-06 | |||
| JPH0910657A | 1997-01-14 | |||
| JP2013078748A | 2013-05-02 | |||
| JP2014528821A | 2014-10-30 | |||
| JP2005262703A | 2005-09-29 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
Download PDF:
Previous Patent: FILM FORMATION METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE
Next Patent: ACCUMULATOR FOR HIGH-PRESSURE HYDROGEN GAS
Next Patent: ACCUMULATOR FOR HIGH-PRESSURE HYDROGEN GAS