FILM FORMATION METHOD AND PLASMA TREATMENT DEVICE

Title:

FILM FORMATION METHOD AND PLASMA TREATMENT DEVICE

Document Type and Number:

WIPO Patent Application WO/2021/256308

Kind Code:

A1

Abstract:

This film formation method for silicon nitride film includes a supply step and a film formation step, the method using a using a plasma treatment device comprising: a treatment container; a placement table; a showerhead; an RF power source; a gas supply mechanism for supplying a treatment gas into the treatment container; and a control unit. In the supply step, a treatment gas that includes a silicon-containing gas, a nitrogen-containing gas, and a dilution gas is supplied from the gas supply mechanism into the treatment container. In the film formation step, power having a frequency within a range of 180-860 MHz is supplied from the RF power source to the treatment gas in the treatment container via the showerhead, transforming the treatment gas into plasma, and thereby forming a silicon nitride film on a substrate.

Inventors:

KANEKO MIYAKO (JP)
HONDA MINORU (JP)

Application Number:

PCT/JP2021/021490

Publication Date:

December 23, 2021

Filing Date:

June 07, 2021

Export Citation:

Click for automatic bibliography generation Help

Assignee:

TOKYO ELECTRON LTD (JP)

International Classes:

H01L21/31; C23C16/42; C23C16/505; H01L21/318

Domestic Patent References:

WO2019193872A1

2019-10-10

Foreign References:

JP2000260767A	2000-09-22
JP2005310834A	2005-11-04
JP2009084625A	2009-04-23
JP2020053455A	2020-04-02