FILM FORMATION METHOD AND FILM FORMATION SYSTEM

Title:

FILM FORMATION METHOD AND FILM FORMATION SYSTEM

Document Type and Number:

WIPO Patent Application WO/2022/190889

Kind Code:

A1

Abstract:

This film formation method comprises a preparation step, a first film formation step, a second film formation step, a modification step, and a removal step. In the preparation step, a substrate is prepared in which a first film and a second film that do not contain silicon are exposed on the surface. In the first film formation step, a self-assembled monomolecular film that has fluorine-containing functional groups and that inhibits formation of a silicon-containing third film is formed on the first film. In the second film formation step, the third film is formed on the second film. When, in the modification step, the substrate temperature is 70°C or lower, the self-assembled monomolecular film is decomposed by plasma that uses a gas containing hydrogen and nitrogen. As a result, using an active species included in the decomposed self-assembled monomolecular film, the side part of the third film formed near the self-assembled monomolecular film is modified to ammonium fluorosilicate. In the removal step, the ammonium fluorosilicate is removed.

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Inventors:

AZUMO SHUJI (JP)
IKE SHINICHI (KR)
KAWANO YUMIKO (JP)
MURAKAMI HIROKI (JP)

Application Number:

PCT/JP2022/007697

Publication Date:

September 15, 2022

Filing Date:

February 24, 2022

Export Citation:

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Assignee:

TOKYO ELECTRON LTD (JP)

International Classes:

H01L21/31; C23C16/01; C23C16/04; H01L21/316

Domestic Patent References:

WO2020091016A1

2020-05-07

Foreign References:

JP2021044534A	2021-03-18
JP2022033558A	2022-03-02
JP2020147792A	2020-09-17
JP2017137564A	2017-08-10
JP2020056104A	2020-04-09
US20180261500A1	2018-09-13