Title:
FILM FORMING APPARATUS, METHOD OF FORMING LOW-PERMITTIVITY FILM, SiCO FILM, AND DAMASCENE INTERCONNECT STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2014/030414
Kind Code:
A1
Abstract:
In a film forming apparatus according to an embodiment, a processing container defines a space including a plasma generation chamber and a processing chamber disposed under the plasma generation chamber. A first gas supply system supplies noble gas to the plasma generation chamber. The plasma generation chamber is sealed by a dielectric window. An antenna supplies a microwave to the plasma generation chamber via the dielectric window. A second gas supply system supplies a precursor gas to the processing chamber. A shield portion is disposed between the plasma generation chamber and the processing chamber. The shield portion includes a plurality of openings providing communication between the plasma generation chamber and the processing chamber, and has ultraviolet ray shielding property. In this film forming apparatus, the pressure in the plasma generation chamber is set greater than the pressure in the processing chamber by a factor of 4 or more. The diffusivity of the precursor gas from the processing chamber to the plasma generation chamber is set to be not more than 0.01.
More Like This:
Inventors:
KIKUCHI YOSHIYUKI (JP)
SAMUKAWA SEIJI (JP)
SAMUKAWA SEIJI (JP)
Application Number:
PCT/JP2013/066731
Publication Date:
February 27, 2014
Filing Date:
June 18, 2013
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
UNIV TOHOKU (JP)
UNIV TOHOKU (JP)
International Classes:
H01L21/31; C23C16/42; C23C16/455; H01L21/316; H01L21/768; H01L23/532
Foreign References:
| JP2005089823A | 2005-04-07 | |||
| JP2012144786A | 2012-08-02 | |||
| JP2009071163A | 2009-04-02 | |||
| JP2007266462A | 2007-10-11 | |||
| JP2006074048A | 2006-03-16 | |||
| JP2008071894A | 2008-03-27 |
Other References:
R. NAVAMATHAVAN ET AL.: "Plasma enhanced chemical vapor deposition of low dielectric constant SiOC(-H) films using MTES/02 precursor", THIN SOLID FILMS, vol. 515, no. 12, 5 December 2006 (2006-12-05), pages 5040 - 5044
KIM, S.-Y. ET AL.: "Characterization of ultra low-k SiOC(H) film deposited by plasma-enhanced chemical vapor deposition (PECVD)", TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, vol. 13, no. 2, 25 April 2012 (2012-04-25), pages 69 - 72
KIM, S.-Y. ET AL.: "Characterization of ultra low-k SiOC(H) film deposited by plasma-enhanced chemical vapor deposition (PECVD)", TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, vol. 13, no. 2, 25 April 2012 (2012-04-25), pages 69 - 72
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
Download PDF: