Title:
FILM FORMING COMPOSITION AND ION IMPLANTATION METHOD
Document Type and Number:
WIPO Patent Application WO/2013/118879
Kind Code:
A1
Abstract:
[Problem] To provide an ion implantation method, a film forming composition for ion implantation, and a resist underlayer film forming composition. [Solution] An ion implantation method which comprises: a step wherein a film forming composition that contains an organic solvent and a compound containing a group 13, group 14, group 15 or group 16 element is applied onto a substrate and baked thereon, thereby forming a film; and a step wherein impurity ions are implanted into the substrate from above and through the film and the group 13, group 14, group 15 or group 16 element in the film is introduced into the substrate. The film forming composition is a film forming composition for ion implantation, which contains an organic solvent and a compound containing a group 13, group 14, group 15 or group 16 element. In addition, a resist underlayer film forming composition which contains a compound that has at least two boric acid ester groups.
More Like This:
Inventors:
OHASHI TOMOYA (JP)
KISHIOKA TAKAHIRO (JP)
KISHIOKA TAKAHIRO (JP)
Application Number:
PCT/JP2013/053110
Publication Date:
August 15, 2013
Filing Date:
February 08, 2013
Export Citation:
Assignee:
NISSAN CHEMICAL IND LTD (JP)
International Classes:
C08L101/00; H01L21/265; G03F7/11; H01L21/027
Foreign References:
| JPH0963982A | 1997-03-07 | |||
| JP2002016013A | 2002-01-18 | |||
| JP2004022616A | 2004-01-22 | |||
| JP2013041140A | 2013-02-28 | |||
| JP2013033187A | 2013-02-14 | |||
| JP2010085893A | 2010-04-15 | |||
| JP2009126940A | 2009-06-11 |
Attorney, Agent or Firm:
HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)
Sepal Tsuneo (JP)
Download PDF:
Claims:
Previous Patent: CYCLIC RNA AND PROTEIN PRODUCTION METHOD
Next Patent: DISC SHAFT CENTER ADJUSTING MECHANISM IN GAS TURBINE
Next Patent: DISC SHAFT CENTER ADJUSTING MECHANISM IN GAS TURBINE