Title:
FILM-FORMING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/170934
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a film-forming composition capable of forming a silicon-containing film excellent in terms of filling property, flatness, and resistance to etching with oxygen-containing gases; and a method for producing a semiconductor substrate. The film-forming composition of the present invention comprises a polysilane and a solvent, wherein the polysilane has two or more first structural units, which are represented by formula (1). In formula (1), R1 is a hydrogen atom or a monovalent organic chain group having 1-20 carbon atoms. R2 is a hydrogen atom, a hydroxy group, or a monovalent organic chain group having 1-20 carbon atoms. It is preferable that R2 in formula (1) be -ORA and RA be a hydrogen atom or a monovalent organic chain group having 1-20 carbon atoms. It is preferable that RA be a hydrogen atom or a monovalent hydrocarbon chain group having 1-20 carbon atoms.
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Inventors:
SEKO TOMOAKI (JP)
KASAI TATSUYA (JP)
TAJI TOMOYA (JP)
TANAKA HIROMITSU (JP)
KASAI TATSUYA (JP)
TAJI TOMOYA (JP)
TANAKA HIROMITSU (JP)
Application Number:
PCT/JP2020/005574
Publication Date:
August 27, 2020
Filing Date:
February 13, 2020
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
C08G77/60; C08L83/16; C09D183/16; G03F7/075; G03F7/11; G03F7/20; H01L21/027
Domestic Patent References:
| WO2004019136A1 | 2004-03-04 |
Foreign References:
| JP2004026894A | 2004-01-29 | |||
| JP2008075089A | 2008-04-03 | |||
| JP2003261681A | 2003-09-19 | |||
| JP2011191546A | 2011-09-29 | |||
| JP2008052203A | 2008-03-06 |
Attorney, Agent or Firm:
AMANO Kazunori (JP)
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