Title:
FILM FORMING METHOD AND FILM FORMING DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/070683
Kind Code:
A1
Abstract:
This film forming method includes: preparing a substrate having a resist film in the upper surface of which an opening is formed; supplying the substrate with a metal-containing gas that contains a metal, thereby causing the metal to permeate at least the upper section of the resist film; and supplying the substrate with a precursor gas containing silanol, thereby selectively forming a protective film containing silicon and oxygen on the upper surface of the resist film as compared to the side surface and bottom surface of the opening.
Inventors:
YAMADA KAZUKI (JP)
MURAKAMI HIROKI (JP)
SAKAI SHUICHIRO (JP)
YAMAJI TOMOHITO (JP)
MURAKAMI HIROKI (JP)
SAKAI SHUICHIRO (JP)
YAMAJI TOMOHITO (JP)
Application Number:
PCT/JP2023/033327
Publication Date:
April 04, 2024
Filing Date:
September 13, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/316; G03F7/095; G03F7/11; G03F7/40; H01L21/3065; H01L21/31
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Download PDF: