FILM FORMING METHOD

WIPO Patent Application WO/2023/074052

A1

Provided is a film forming method by which a metal film having a high melting point can be formed in a state where a stress difference is as small as possible and which is suitable in the case of using a cylindrical target.　A film forming method according to the present invention, which forms a metal film having a high melting point on an opposite surface to each target 5 of a substrate Sw disposed in a vacuum treatment room 1a, comprises: a first step for taking, as a first target group 50a, starting point targets 5a, 5b at which both outer edge parts of the substrate face each other and targets 5c, 5d that are positioned outward in a target aligned direction from the starting point targets, for taking, as a second target group 50b, targets 5e–5h that are positioned inward in the target aligned direction from the starting point targets, and for supplying power to each of the targets of the second target group by means of a sputter power supply 7 and forming a film when the metal film having a high melting point starts to be formed on the substrate; and a second step for supplying power to each of the targets of the first target group by means of the sputter power supply and forming a film simultaneously with or prior to the stopping of supplying power to each target of the second target group.

UJIHARA YUUSUKE (JP)
SUDA TOMOKAZU (JP)
HASEGAWA MASAKI (JP)
YOKOYAMA AKIHIRO (JP)

PCT/JP2022/026796

May 04, 2023

July 06, 2022

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ULVAC INC (JP)

C23C14/34; C23C14/35

JP2017522455A	2017-08-10
JPH10152772A	1998-06-09
JPH0364460A	1991-03-19

SEIGA IP CORPORATION (JP)

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