Title:
FIN SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/092819
Kind Code:
A1
Abstract:
Provided in the present invention is a photosensitive sensor, comprising a top electrode, an isolation layer, a bottom electrode, several conductive structures, a support structure, and a multiplication structure array; each multiplication structure is inclined relative to the top electrode and is correspondingly and electrically connected to the conductive structure, such that several accelerating cavity structures are formed between the top electrode and the isolation layer; and an opening facing the top electrode is formed at the top of each accelerating cavity structure, and an emergent through hole is formed at the bottom of each accelerating cavity structure, the emergent through hole being opposite the bottom electrode, and photoelectrons being incident to the accelerating cavity structure, and being formed into secondary photoelectrons through acceleration and multiplication, so as to form amplified signals.
More Like This:
| JP2000284060 | ELECTRONIC DETECTOR |
| JP6889772 | Spray chambers and how to use them |
Inventors:
KANG XIAOXU (CN)
JIANG BIN (CN)
CHEN SHOUMIAN (CN)
JIANG BIN (CN)
CHEN SHOUMIAN (CN)
Application Number:
PCT/CN2021/143858
Publication Date:
June 01, 2023
Filing Date:
December 31, 2021
Export Citation:
Assignee:
SHANGHAI IC R&D CT CO LTD (CN)
SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MAT INDUSTRY INNOVATION CENTER CO LTD (CN)
SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MAT INDUSTRY INNOVATION CENTER CO LTD (CN)
International Classes:
H01J43/24
Foreign References:
| JPS6258536A | 1987-03-14 | |||
| CN110416056A | 2019-11-05 | |||
| US5180943A | 1993-01-19 | |||
| JPH0817389A | 1996-01-19 |
Attorney, Agent or Firm:
SHANGHAI IFUTURE INTELLECTUAL PROPERTY LAW FIRM (CN)
Download PDF: