Title:
FLASH MEMORY HAVING A SPARE SECTOR OF REDUCED ACCESS TIME
Document Type and Number:
WIPO Patent Application WO/2004/097841
Kind Code:
A1
Abstract:
A semiconductor memory having a plurality of regular sectors and a spare sector which can replace the regular sector. The semiconductor memory includes a regular sector selection signal generation circuit and a spare sector selection signal generation circuit for generating a regular sector selection signal for selecting a regular sector and a spare sector selection signal for selecting a spare sector, respectively, in response to an address varying signal. Furthermore, the semiconductor memory includes a redundant memory for storing replacement information for replacing a regular sector with a spare sector so that the replacement information is read out in response to the address varying signal and a reference redundant memory having the same storage element as the redundant memory so that information stored in this storage element is read out in response to the address varying signal and generating an output signal varying upon completion of the read out. In response to the variation of the output signal of the reference redundant memory, the regular sector selection signal or the spare sector selection signal is set to a non-selection state according to the replacement information read out from the redundant memory.
Inventors:
YAMADA SHIGEKAZU (JP)
Application Number:
PCT/JP2003/005503
Publication Date:
November 11, 2004
Filing Date:
April 30, 2003
Export Citation:
Assignee:
FUJITSU LTD (JP)
YAMADA SHIGEKAZU (JP)
YAMADA SHIGEKAZU (JP)
International Classes:
G11C7/00; G11C29/00; (IPC1-7): G11C29/00
Foreign References:
| JP2000149587A | 2000-05-30 | |||
| JPH11242896A | 1999-09-07 | |||
| JP2000187995A | 2000-07-04 | |||
| JP2000357395A | 2000-12-26 | |||
| JPS58164096A | 1983-09-28 |
Attorney, Agent or Firm:
Doi, Kenji (Doi & Associates Toshou-Bldg. No. 3,
3-9-5, Shin-yokohama, Kohoku-k, Yokohama-shi Kanagawa, JP)
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