FREE-STANDING SUBSTRATE, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR LIGHT-EMITTING DEVICE

WIPO Patent Application WO/2006/101225

A1

Disclosed are a free-standing substrate, a manufacturing method thereof, and a semiconductor light-emitting device. The free-standing substrate comprises a semiconductor layer and inorganic particles, and the inorganic particles are contained in the semiconductor layer. The method for manufacturing a free-standing substrate comprises the following steps (a)-(c) in this order: the step (a) for arranging inorganic particles on a substrate, the step (b) for growing a semiconductor layer, and the step (c) for separating the semiconductor layer from the substrate. Alternatively, the method for manufacturing a free-standing substrate comprises the following steps (s1), (a), (b) and (c) in this order: the step (s1) for growing a buffer layer on a substrate, the step (a) for arranging inorganic particles on the buffer layer, the step (b) for growing a semiconductor layer, and the step (c) for separating the semiconductor layer from the substrate. The semiconductor light-emitting device comprises the free-standing substrate, a conductive layer, a light-emitting layer and an electrode.

UEDA KAZUMASA (JP)
NISHIKAWA NAOHIRO (JP)
TSUCHIDA YOSHIHIKO (JP)

PCT/JP2006/306068

September 28, 2006

March 20, 2006

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SUMITOMO CHEMICAL CO (JP)
UEDA KAZUMASA (JP)
NISHIKAWA NAOHIRO (JP)
TSUCHIDA YOSHIHIKO (JP)

H01L21/205; C23C16/01; C23C16/34; H01L33/00

JP2000349333A	2000-12-15
JP2003282450A	2003-10-03
JP2000196192A	2000-07-14

Enomoto, Masayuki c/o Sumitomo Chemical Intellectual Property Service (Limited 5-33, Kitahama 4-chome, Chuo-k, Osaka-shi Osaka 50, JP)

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