FREESTANDING GAN CRYSTAL SUBSTRATE AND MANUFACTURING METHOD FOR SAME

WIPO Patent Application WO/2011/155341

A1

Provided is a freestanding GaN crystal substrate that is electrically conductive and emits very little yellow light from all surfaces, and a method for manufacturing the same. The present freestanding GaN crystal substrate grown by HVPE, has a (0001) face, and a {10-11} face and/or a {11-22} face existing together as crystal growth surfaces excluding crystal side surfaces, wherein the (0001) face growth crystal region has a carbon concentration of no more than 5x1016 at/cm3, a silicon concentration of at least 5 x 1017 silicon at/cm3 and no more than 2 x 1018 at/cm3, and an oxygen concentration of no more than 1 x 1017 at/cm3, and in a faceted crystal region with at least a {10-11} face and/or a {11-22} face as a growth face, carbon concentration is no more than 3 x 1016 at/cm3, silicon concentration is no more than 5 x 1017 at/cm3, and oxygen concentration is at least 5 x 1017 at/cm3 and no more than 5 x 1018 at/cm3.

FUJIWARA SHINSUKE (JP)
UEMATSU KOJI (JP)
KASAI HITOSHI (JP)
OKAHISA TAKUJI (JP)

PCT/JP2011/062106

December 15, 2011

May 26, 2011

Click for automatic bibliography generation  

SUMITOMO ELECTRIC INDUSTRIES (JP)
FUJIWARA SHINSUKE (JP)
UEMATSU KOJI (JP)
KASAI HITOSHI (JP)
OKAHISA TAKUJI (JP)

C30B29/38; C30B25/16; H01L21/205

JP2001102307A	2001-04-13
JP2006265101A	2006-10-05
JP2009269816A	2009-11-19
JP2009126721A	2009-06-11
JP2009173507A	2009-08-06
JP2007197302A	2007-08-09

KENSAKU MOTOKI: "Development of GaN substrates", SEI TECHNICAL REVIEW, no. 175, July 2009 (2009-07-01), pages 10 - 18

NAKATA, Motomi et al. (JP)
Nakada Motoki (JP)

View/Download PDF      PDF Help

Previous Patent: FLEXIBLE PRINTED WIRING BOARD

Next Patent: OPTICAL DEVICE, AND METHOD FOR MANUFACTURING OPTICAL DEVICE