GaN-BASED SEMICONDUCTOR DEVICE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR MANUFACTURING THE SAME

Title:

GaN-BASED SEMICONDUCTOR DEVICE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR MANUFACTURING THE SAME

Document Type and Number:

WIPO Patent Application WO/2023/141749

Kind Code:

A1

Abstract:

A semiconductor device having improved leakage current characteristics includes a semiconductor substrate with first and second nitride-based semiconductor layers so as to form a heterojunction therebetween with a two-dimensional electron gas (2DEG) region. A doped III-V nitride-based semiconductor layer is disposed over the second nitride-based semiconductor layer. The doped layer has a substantially inverted trapezoidal cross-sectional shape with a longer inverted trapezoid base as an upper surface of the doped III-V nitride-based semiconductor layer and a width of the cross-sectional shape decreasing as the distance away from the upper surface increases. A gate electrode is disposed on or above the doped III-V semiconductor layer and positioned on or above the longer inverted trapezoid base. At least two source/drain (S/D) electrodes are disposed over the second nitride-based semiconductor layer.

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Inventors:

ZHANG XIAO (CN)
ZHANG LIJIE (CN)
OUYANG JUE (CN)
HSIEH WEN-YUAN (CN)

Application Number:

PCT/CN2022/073701

Publication Date:

August 03, 2023

Filing Date:

January 25, 2022

Export Citation:

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Assignee:

INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)

International Classes:

H01L29/20; H01L21/335; H01L29/06; H01L29/778

Foreign References:

US10204791B1	2019-02-12
US20100117146A1	2010-05-13
US20200365699A1	2020-11-19
US20210043743A1	2021-02-11
US20170358495A1	2017-12-14
CN102856355A	2013-01-02
CN110137244A	2019-08-16

Attorney, Agent or Firm:

BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)

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