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Title:
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2021/176750
Kind Code:
A1
Abstract:
A gallium arsenide single crystal substrate having a main surface, wherein the ratio of the number of As atoms that are present in the form of diarsenic trioxide to the number of As atoms that are present in the form of diarsenic pentaoxide in the main surface is 2 or more as determined by X-ray photoelectron spectroscopy at a photoelectron take-off angle of 5° with use of an X ray having an energy of 150 eV. The main surface has an arithmetic mean roughness (Ra) of 0.3 nm or less.

Inventors:
UEMATSU KOJI (JP)
SATOH ISSEI (JP)
NAKANISHI FUMITAKE (JP)
Application Number:
PCT/JP2020/033077
Publication Date:
September 10, 2021
Filing Date:
September 01, 2020
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/42
Domestic Patent References:
WO2018216203A12018-11-29
WO2014124980A22014-08-21
Foreign References:
JP2008300747A2008-12-11
JP2005298319A2005-10-27
JPH1012577A1998-01-16
JP2014082169A2014-05-08
JP2004139746A2004-05-13
JP2020008590W2020-03-02
JPH1036199A1998-02-10
JPH1012577A1998-01-16
Other References:
"Method for Estimating Inelastic Mean Free Path of Electron by Tpp-2M", JOURNAL OF SURFACE ANALYSIS, vol. 1, no. 2, 1995
YUKIHIRO HIROTA ET AL.: "Clean and Damage-Free GaAs Surface Prepared by Using the Ultrasonic Running Deionized Water Treatment", SURFACE SCIENCE, vol. 12, no. 6, 1991, pages 380 - 392
TERUO TSUNODA: "Cleaning Technology of Electronic Materials", JOURNAL OF JAPAN OIL CHEMISTS, vol. 35, no. 10, 1986, pages 867 - 872
See also references of EP 4116468A4
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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