Title:
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2024/057533
Kind Code:
A1
Abstract:
This gallium arsenide single crystal substrate has a circular main surface and has a first integrated intensity ratio or a second integrated intensity ratio. The first integrated intensity ratio and the second integrated intensity ratio can be determined from the spectra for arsenic and gallium based on a prescribed X-ray photoelectron spectroscopic method. The first integrated intensity ratio is the ratio of the sum of the integrated intensity for the elemental gallium present as digallium monoxide and the integrated intensity for the elemental gallium present as gallium trioxide, to the integrated intensity for the elemental gallium present as gallium arsenide, and is not greater than 12. The second integrated intensity ratio is the ratio of the sum of the integrated intensity for the elemental gallium present as digallium monoxide and the integrated intensity for the elemental gallium present as gallium trioxide, to the sum of the integrated intensity for the elemental arsenic present as arsenic pentoxide and the integrated intensity for the elemental arsenic present as arsenic trioxide, and is not greater than 1.2. The number of particles with a long diameter of 0.16 µm or more is not greater than 2 per 1 cm2 of the main surface.
Inventors:
KIYAMA MAKOTO (JP)
SAITO YOSHIHIRO (JP)
HOSHINA YUTAKA (JP)
NAKAYAMA YOJIRO (JP)
SAITO YOSHIHIRO (JP)
HOSHINA YUTAKA (JP)
NAKAYAMA YOJIRO (JP)
Application Number:
PCT/JP2022/034768
Publication Date:
March 21, 2024
Filing Date:
September 16, 2022
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/42
Domestic Patent References:
| WO2018216440A1 | 2018-11-29 |
Foreign References:
| JP2008300747A | 2008-12-11 | |||
| JPH1012577A | 1998-01-16 | |||
| JP2006352075A | 2006-12-28 | |||
| JPH0645318A | 1994-02-18 | |||
| JP2016519033A | 2016-06-30 | |||
| JP2021015999A | 2021-02-12 | |||
| JPH11278979A | 1999-10-12 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
Download PDF: