GALLIUM INDIUM NITRIDE ARSENIDE HETERO-FIELD-EFFECT TRANSISTOR, ITS MANUFACTURING METHOD, AND TRANSMITTER/RECEIVER USING SAME

Title:

GALLIUM INDIUM NITRIDE ARSENIDE HETERO-FIELD-EFFECT TRANSISTOR, ITS MANUFACTURING METHOD, AND TRANSMITTER/RECEIVER USING SAME

Document Type and Number:

WIPO Patent Application WO/2004/040638

Kind Code:

A1

Abstract:

A hetero-field-effect transistor comprises an InP substrate (21), a channel layer (23) formed on a buffer layer (22) on the InP substrate, a spacer layer (25a) made of a semiconductor having a bandgap larger than that of the channel layer and having a heterojunction with the channel layer, and a carrier supply layer (26) adjacent to the spacer layer. The channel layer includes a predetermined semiconductor layer made of a compound semiconductor the composition of which is expressed by chemical formula Ga_xIn_1-xN_yA_1-y, where A is As or Sb, the number x is 0≤x≤0.2, the number y is 0.03≤y≤0.10.

Inventors:

OTSUKA NOBUYUKI (JP)
MIZUNO KOICHI (JP)
YOSHII SHIGEO (JP)
SUZUKI ASAMIRA (JP)

Application Number:

PCT/JP2003/013747

Publication Date:

May 13, 2004

Filing Date:

October 28, 2003

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD (JP)
OTSUKA NOBUYUKI (JP)
MIZUNO KOICHI (JP)
YOSHII SHIGEO (JP)
SUZUKI ASAMIRA (JP)

International Classes:

H01L21/335; H01L21/338; H01L29/778; H01L29/812; H01L29/20; (IPC1-7): H01L21/338; H01L29/778; H01L29/812; H01L21/203; H01L21/205

Foreign References:

JP2003289082A	2003-10-10
JP2000091559A	2000-03-31
JP2000164852A	2000-06-16
JP2002094187A	2002-03-29
JP2000216101A	2000-08-04
JP2003197644A	2003-07-11

Other References:

HANG, D.R. ET AL: "Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well.", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 17, no. 9, September 2002 (2002-09-01), pages 999 - 1003, XP002974974
WANG, JYH-SHYANG ET AL: "Growth of InAsN/InGaAs(P) quantum wells on inP by gas source molecular beam epitaxy.", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B, vol. 19, no. 1, 2001, pages 202 - 206, XP002974975

Attorney, Agent or Firm:

Sumida, Yoshihiro (3rd Fl. Bo-eki Bldg., 123-1, Higashi-machi, Chuo-k, Kobe-shi Hyogo, JP)

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