GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL

WIPO Patent Application WO/2023/027077

A1

A gallium nitride crystal having a main surface 1 which is inclined at 0 degree to 10 degrees to the (000-1) crystal plane and contains F, with the total content of halogen elements other than F being 1/100 or less of the F content, and which is a special main surface A that satisfies at least one of the conditions (A1) to (A3), has less specific crystal defects and high quality. It is possible to draw a first line segment which is an imaginary line segment that has a length of 40 mm and extends in a first direction on the special main surface A, and a second line segment which is an imaginary line segment that has a length of 40 mm and extends in a second direction on the special main surface A, the second direction being perpendicular to the first direction. (A1) The facet growth region density is not more than 500 cm-2 in an arbitrary 10 mm × 10 mm square region on the special main surface A. (A2) At least one 20 mm × 20 mm square region, in which the facet growth region density is less than 5 cm-2, is found in the special main surface A. (A3) The value of (total area of facet growth regions)/(area of special main surface A) is 40% or less.

MIKAWA YUTAKA (JP)
KURIMOTO KOUHEI (JP)
BAO QUANXI (JP)

PCT/JP2022/031744

March 02, 2023

August 23, 2022

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MITSUBISHI CHEM CORP (JP)
JAPAN STEEL WORKS LTD (JP)

C30B29/38; C30B7/10

WO2015107813A1

2015-07-23

JP2013056398A	2013-03-28
JP2013038116A	2013-02-21
JP2015178438A	2015-10-08
JP2003277182A	2003-10-02
JP2005008444A	2005-01-13
JP2011068545A	2011-04-07

SIKS & CO. (JP)

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