Title:
GALLIUM NITRIDE SINTERED COMPACT AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2023/243566
Kind Code:
A1
Abstract:
Provided are: a gallium nitride sintered compact which is capable of forming a sputtering film at a faster film-forming speed than conventional gallium nitride sintered compacts created by hot pressing; an industrial method for producing the same; a sputtering target provided with this sintered compact; and at least one film-forming method using this sputtering target. This gallium nitride sintered compact has a void ratio standard deviation of 1.0% or less as found from a cross sectional scanning electron micrograph.
Inventors:
KUSUSE YOSHIRO (JP)
IIHAMA JUNYA (JP)
HARA SHINICHI (JP)
MESUDA MASAMI (JP)
IIHAMA JUNYA (JP)
HARA SHINICHI (JP)
MESUDA MASAMI (JP)
Application Number:
PCT/JP2023/021587
Publication Date:
December 21, 2023
Filing Date:
June 09, 2023
Export Citation:
Assignee:
TOSOH CORP (JP)
International Classes:
C23C14/34; C04B35/58; C04B35/64; H01L21/203
Foreign References:
| JPH02228470A | 1990-09-11 | |||
| JP2014159368A | 2014-09-04 |
Attorney, Agent or Firm:
T.S. PARTNERS et al. (JP)
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