Title:
GAN-BASED TRENCH METAL OXIDE SCHOTTKY BARRIER DIODE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/039918
Kind Code:
A1
Abstract:
The present invention relates to a GaN-based trench metal oxide Schottky barrier diode and a preparation method therefor. A device structure comprises sequentially comprises, from bottom to top: an ohmic contact metal layer, i.e. a cathode, which covers a substrate; a GaN self-supporting substrate; an n-type lightly doped epitaxial layer; p-type high-concentration GaN layers, which are arranged in parallel; dielectric layers in trenches; and a metal layer, i.e. an anode, which covers an upper surface of a device. By means of the present invention, firstly, p-type high-concentration GaN layers are formed by means of a selective area epitaxy method, so as to obtain p-type high-concentration GaN layers with a high carrier concentration; and then, dielectric layers are deposited, contact holes are opened in the dielectric layers, and anode metal is connected to the p-type high-concentration GaN layers by means of the contact holes, so as to form an ohmic contact. The p-type high-concentration GaN layers and the n-type lightly doped epitaxial layer at the bottom form pn junctions, thereby significantly enhancing the surge handling capability during forward conduction; in addition, the p-type high-concentration GaN layers under the dielectric layers can also reduce high electric fields at corners of the dielectric layers, thereby improving the reliability of the dielectric layers and the breakdown voltage of the device.
Inventors:
LIU YANG (CN)
ZHOU YUHAO (CN)
ZHOU YUHAO (CN)
Application Number:
PCT/CN2021/119549
Publication Date:
March 23, 2023
Filing Date:
September 22, 2021
Export Citation:
Assignee:
UNIV SUN YAT SEN (CN)
International Classes:
H01L29/06; H01L21/329; H01L29/20; H01L29/872
Foreign References:
| JP2010147399A | 2010-07-01 | |||
| CN104269445A | 2015-01-07 | |||
| CN105633172A | 2016-06-01 | |||
| US9082628B2 | 2015-07-14 |
Attorney, Agent or Firm:
YOGO PATENT AND TRADEMARK AGENCY LIMITED COMPANY (CN)
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