Title:
GAS BARRIER FILM AND FILM FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/180487
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a gas barrier film having excellent gas barrier performance and transparency and a film forming method for manufacturing the gas barrier film. The gas barrier film comprises a support body and an inorganic layer containing silicon, hydrogen, and one or more of oxygen, nitrogen, and carbon. In the inorganic layer, the hydrogen atom concentration in a region X is 10 to 45 atom%, and the hydrogen atom concentration in a region Y is 5 to 35 atom% and is lower than the hydrogen atom concentration in the region X. In the support body, an intensity ratio of 3000 to 3500 cm-1/2700 to 3000 cm-1 of an IR spectrum is 1 to 7 as a ratio of inorganic layer formation-side surface/opposite-side surface. The film forming method comprises, sequentially: heating a support body before formation of a film of an inorganic layer; and, using at least two film forming units, forming a film of an inorganic layer by hydrogen addition, and forming a film of an inorganic layer on a base material having a film of an inorganic layer formed thereon.
Inventors:
MOCHIZUKI YOSHIHIKO (JP)
INABA TATSUYA (JP)
INABA TATSUYA (JP)
Application Number:
PCT/JP2018/009900
Publication Date:
October 04, 2018
Filing Date:
March 14, 2018
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
B32B9/00; B32B37/02; C23C16/42; C23C16/50; C23C16/54; H01L51/50; H05B33/02; H05B33/04
Domestic Patent References:
| WO2016052123A1 | 2016-04-07 |
Foreign References:
| JPH06184755A | 1994-07-05 | |||
| JP2011184703A | 2011-09-22 | |||
| JP2013056513A | 2013-03-28 | |||
| JP2001279456A | 2001-10-10 | |||
| JP2012209550A | 2012-10-25 | |||
| JPH01255661A | 1989-10-12 | |||
| JP2009090634A | 2009-04-30 |
Attorney, Agent or Firm:
NAKASHIMA Junko et al. (JP)
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