Title:
GAS DETECTION METHOD AND INFORMATION PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/106615
Kind Code:
A1
Abstract:
In a gas detection method according to one embodiment of the present disclosure, a semiconductor sensor comprising an adsorption layer formed from a metal oxide is heated, the resistance value of the semiconductor sensor in an air atmosphere in which a reducing gas is present is measured, and when, using as a reference the resistance value of the semiconductor sensor in an air atmosphere in which the reducing gas is not present, the measured resistance value is high in a first temperature range and low in a second temperature range that is higher than the first temperature range, it is concluded that the reducing gas contains a detection target substance.
Inventors:
SUGIYAMA TAIKI (JP)
NAGAI NOBUYUKI (JP)
NAKAO MICHIKO (JP)
MIYAHARA KAZUHIKO (JP)
ISHIDA YUICHI (JP)
GOTO YOSHIO (JP)
NAGAI NOBUYUKI (JP)
NAKAO MICHIKO (JP)
MIYAHARA KAZUHIKO (JP)
ISHIDA YUICHI (JP)
GOTO YOSHIO (JP)
Application Number:
PCT/JP2020/042380
Publication Date:
June 03, 2021
Filing Date:
November 13, 2020
Export Citation:
Assignee:
SONY GROUP CORP (JP)
International Classes:
G01N27/12
Domestic Patent References:
| WO2018097270A1 | 2018-05-31 |
Foreign References:
| JPH1194786A | 1999-04-09 | |||
| JP2004271263A | 2004-09-30 | |||
| JP2005134311A | 2005-05-26 | |||
| JP2008058214A | 2008-03-13 | |||
| JPH11304746A | 1999-11-05 | |||
| JP2020056643A | 2020-04-09 |
Other References:
PATI SUMATI, P. BANERJI, S.B. MAJUMDER: "n- to p- type carrier reversal in nanocrystalline indium doped ZnO thin film gas sensors", INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, vol. 39, no. 27, 10 August 2014 (2014-08-10), pages 15134 - 15141, XP055830476, DOI: 10.1016/j.ijhydene.2014.07.075
Attorney, Agent or Firm:
OMORI, Junichi (JP)
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