Title:
GAS SUPPLY METHOD FOR SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLY SYSTEM AND SEMICONDUCTOR MANUFACTURING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2013/137152
Kind Code:
A1
Abstract:
A gas supply method comprising a first pressurization step, a second pressurization step, and an exhaust step, is provided. The first pressurization step involves controlling communication between first and second gas pipes and a diffusion chamber using first and second valves; controlling the discharge of gas inside the first and second gas pipes using third and fourth valves connected further upstream than the first and second valves of the first and second gas pipes; controlling communication between an exhaust pipe and the diffusion chamber using a fifth valve; and closing the first valve and shutting off the third valve before a first step, and raising the pressure of a first gas inside the first gas pipe. The second pressurization step involves closing the second valve and shutting off the fourth valve before a second step, and raising the pressure of a second gas inside the second gas pipe. The exhaust step involves opening the fifth valve in response to the start of the first step and the second step, and evacuating gas inside the diffusion chamber.
Inventors:
HATOH HIDEYUKI (JP)
OGAWA HIROYUKI (JP)
OGAWA HIROYUKI (JP)
Application Number:
PCT/JP2013/056525
Publication Date:
September 19, 2013
Filing Date:
March 08, 2013
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L21/31; H01L21/3205; H01L21/768; H01L23/522
Foreign References:
| JP2010510669A | 2010-04-02 | |||
| JP2009130108A | 2009-06-11 | |||
| JP2008091651A | 2008-04-17 | |||
| JP2012023221A | 2012-02-02 | |||
| JPH09266207A | 1997-10-07 | |||
| JP2008210952A | 2008-09-11 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Tadashige Ito (JP)
Tadashige Ito (JP)
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