Title:
GATE DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCH
Document Type and Number:
WIPO Patent Application WO/2018/078914
Kind Code:
A1
Abstract:
When turning off a semiconductor switch, starting from a state in which a first switching element (Q1) is in a fixed ON-state, a drive signal generation circuit turns on a fourth switching element (Q4) for a predetermined first period to excite an inductor element and then turns off the first switching element (Q1) for a predetermined second period to discharge gate stored charge, turns on the first switching element (Q1) for a predetermined third period to interrupt discharging of the gate stored charge, turns off the first switching element (Q1) again for a predetermined fourth period, and then sets the fourth switching element (Q4) to a fixed OFF-state and a second switching element (Q2) to the fixed ON-state, thereby setting the semiconductor switch to the fixed OFF-state. The power consumption of a gate drive circuit is thus reduced.
More Like This:
Inventors:
KONDO RYOTA (JP)
ONDA KOHEI (JP)
TAN YOHEI (JP)
ONDA KOHEI (JP)
TAN YOHEI (JP)
Application Number:
PCT/JP2017/014837
Publication Date:
May 03, 2018
Filing Date:
April 11, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H02M1/08; H03K17/16; H03K17/567
Foreign References:
| JP2014165932A | 2014-09-08 | |||
| JP2016123199A | 2016-07-07 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
Download PDF: