Title:
GATE DRIVE CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2022/196033
Kind Code:
A1
Abstract:
A gate drive circuit (201) includes: a PNP transistor (Q1) having an emitter connected to a gate of a driven transistor (Q) and a collector connected to a ground application terminal; a capacitor (C1) having a first end connected to a base of the PNP transistor and a second end connected to the ground application terminal; a base-emitter resistor (R1) having a first end connected to the emitter of the PNP transistor and a second end connected to the base of the PNP transistor; an electric charge supplying portion (201A) configured to be capable of supplying electric charge to the gate of the driven transistor; an electric charge extracting portion (201B) configured to be capable of extracting electric charge from the gate of the driven transistor; a charging portion (201C) configured to be capable of charging the capacitor when electric charge is supplied to the driven transistor by the electric charge supplying portion; and a discharging portion (201D) configured to be capable of discharging the capacitor when electric charge is extracted from the gate of the driven transistor by the electric charge extracting portion.
Inventors:
TAJIMA SHINYA (JP)
KITAGAWA SEIYA (JP)
KITAGAWA SEIYA (JP)
Application Number:
PCT/JP2021/048788
Publication Date:
September 22, 2022
Filing Date:
December 28, 2021
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H03K17/16; H02M1/08; H03K17/687
Domestic Patent References:
| WO2017119090A1 | 2017-07-13 |
Foreign References:
| CN211579865U | 2020-09-25 | |||
| US20050253165A1 | 2005-11-17 | |||
| JPH05161342A | 1993-06-25 |
Attorney, Agent or Firm:
SANO PATENT OFFICE (JP)
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