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Title:
GRAPHENE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2013/125669
Kind Code:
A1
Abstract:
First, in a first step (S101), a SiC substrate is arranged in an inert atmosphere. Next, in a second step (S102), graphene is formed on the surface of the SiC substrate by heating the SiC substrate in the inert atmosphere and evaporating the silicon on the surface of the SiC substrate. The second step (S102) is performed under production conditions such that the root-mean-square surface roughness of the surface of the formed graphene becomes 0.5 nm or less. Graphene with a surface having a root-mean-square surface roughness of 0.5 nm or less is in a single-layer state and has a high-quality crystal state in which the occurrence of crystal defects etc. is suppressed.

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Inventors:
NAGASE MASAO (JP)
Application Number:
PCT/JP2013/054466
Publication Date:
August 29, 2013
Filing Date:
February 22, 2013
Export Citation:
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Assignee:
UNIV TOKUSHIMA (JP)
International Classes:
C01B31/02
Domestic Patent References:
WO2010023934A12010-03-04
Foreign References:
JP2011230959A2011-11-17
Attorney, Agent or Firm:
YAMAKAWA, Masaki et al. (JP)
Masaki Yamakawa (JP)
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