GRAPHENE OXIDE MEMRISTOR BASED ON LAMINATED STRUCTURE AND PREPARATION METHOD THEREFOR

Title:

GRAPHENE OXIDE MEMRISTOR BASED ON LAMINATED STRUCTURE AND PREPARATION METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2023/202054

Kind Code:

A1

Abstract:

The present invention belongs to the technical field of data storage, and in particular relates to a graphene oxide memristor based on a laminated structure and a preparation method therefor. The graphene oxide memristor based on a laminated structure comprises a conductive substrate layer, a first graphene oxide layer, a pyridinium salt film layer, a second graphene oxide layer and a metal electrode layer, which are arranged in sequence. With the ingenious design of the functional layers of the laminated structure, by inserting a pyridinium salt film as a buffer layer between graphene oxide film layers, the present invention effectively inhibits the irregular migration of metal ions and the disordered growth of conductive filaments, induces stable bidirectional tuning and fast response performance of the graphene oxide memristor, and achieves the preparation of high-performance artificial synapses. In addition, the present invention has extremely high application value in the fields of bionics and neuromorphic computing.

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Inventors:

LI YANG (CN)
LING SONGTAO (CN)
ZHANG CHENG (CN)
SHI ZHIMING (CN)
HE RUIYU (CN)
ZHU CHENGCAI (CN)
BI RAN (CN)

Application Number:

PCT/CN2022/132123

Publication Date:

October 26, 2023

Filing Date:

November 16, 2022

Export Citation:

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Assignee:

UNIV SUZHOU SCI & TECHNOLOGY (CN)

International Classes:

G16C20/70

Foreign References:

CN114899312A	2022-08-12
CN113488587A	2021-10-08
CN108682738A	2018-10-19

Other References:

LI YANG, ZHANG CHENG, SHI ZHIMING, MA CHUNLAN, WANG JUN, ZHANG QICHUN: "Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications", SCIENCE CHINA MATERIALS, vol. 65, no. 8, 1 August 2022 (2022-08-01), pages 2110 - 2127, XP093102332, ISSN: 2095-8226, DOI: 10.1007/s40843-021-1771-5

Attorney, Agent or Firm:

CENTRAL SOUTH WELL INTELLECTUAL PROPERTY OFFICE (CN)

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