Title:
GRAPHENE-POROUS SILICON MATERIAL HAVING HIGH PHOTOLUMINESCENCE PROPERTY AND PREPARATION METHOD
Document Type and Number:
WIPO Patent Application WO/2018/145331
Kind Code:
A1
Abstract:
The invention provides a graphene-porous silicon material having high photoluminescence property and a preparation method. The preparation method comprises the following steps: 1, preparing a single layer of graphene on a copper foil by using a CVD method to obtain the copper foil covered by the graphene; 2, selecting an n-type monocrystalline silicon wafer, and polishing the two surfaces thereof; 3, performing a ultrasonic cleaning on the n-type monocrystalline silicon wafer, treated in step 2, sequentially in absolute ethyl alcohol and deionized water, and then blow-drying; electrochemically corroding the blow-dried n-type monocrystalline silicon wafer in a hydrofluoric acid/absolute ethyl alcohol mixed solution; and cleaning with deionized water after the electrochemical corrosion is finished, and blow-drying to obtain a porous silicon; 4, after the graphene is treated, recombinating the surface of the porous silicon and the graphene; and finally, putting the graphene-porous silicon composite material into acetone for degumming to obtain the graphene-porous silicon material having high photoluminescence property. The graphene-porous silicon material prepared in the invention has advantages that the optical property index of the porous silicon is obviously improved and the optical application prospect of the porous silicon is widened.
Inventors:
GE DAOHAN (CN)
ZHANG LIQIANG (CN)
QIAN DONGLIANG (CN)
CHENG GUANGGUI (CN)
DING JIANNING (CN)
ZHANG LIQIANG (CN)
QIAN DONGLIANG (CN)
CHENG GUANGGUI (CN)
DING JIANNING (CN)
Application Number:
PCT/CN2017/074496
Publication Date:
August 16, 2018
Filing Date:
February 23, 2017
Export Citation:
Assignee:
UNIV JIANGSU (CN)
International Classes:
C09K11/02; C09K11/59; C23C16/26; C25F3/12
Domestic Patent References:
| WO2016178452A1 | 2016-11-10 |
Foreign References:
| KR20150142744A | 2015-12-23 | |||
| CN103087710A | 2013-05-08 |
Other References:
QIAN, DONGLIANG ET AL.: "Fabrication and properties of a novel graphene/porous silicon nitride composite material", ELECTRONIC COMPONENTS & MATERIALS, vol. 36, no. 1, 30 December 2016 (2016-12-30), pages 33, ISSN: 1001-2028
Attorney, Agent or Firm:
JW IP LAW FIRM (CN)
Download PDF: