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Title:
GROUP III NITRIDE SEMICONDUCTOR DEVICE AND EPITAXIAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2006/098167
Kind Code:
A1
Abstract:
Disclosed is a group III nitride semiconductor device wherein leakage current from a Schottky electrode is reduced. In a high-electron-mobility transistor (1), a supporting substrate (3) is composed of AlN, AlGaN and GaN. An AlYGa1-YN epitaxial layer (5) has a surface roughness (Rms) of not more than 0.25 nm, and this surface roughness is defined by a 1 μm square area. A GaN epitaxial layer (7) is formed between the AlYGa1-YN supporting substrate (3) and the AlYGa1-YN epitaxial layer (5). A Schottky electrode (9) is formed on the AlYGa1-YN epitaxial layer (5). A first ohmic electrode (11) is formed on the AlYGa1-YN epitaxial layer (5), and a second ohmic electrode (13) is formed on the AlYGa1-YN epitaxial layer (5). One of the first and second ohmic electrodes (11, 13) is a source electrode, and the other is a drain electrode. The Schottky electrode (9) is a gate electrode of the high-electron-mobility transistor (1).

Inventors:
TANABE TATSUYA
KIYAMA MAKOTO
MIURA KOUHEI
SAKURADA TAKASHI
Application Number:
PCT/JP2006/304095
Publication Date:
September 21, 2006
Filing Date:
March 03, 2006
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
TANABE TATSUYA
KIYAMA MAKOTO
MIURA KOUHEI
SAKURADA TAKASHI
International Classes:
H01L21/338; H01L21/205; H01L29/778; H01L29/812
Foreign References:
JP2003059946A2003-02-28
JP2004327882A2004-11-18
JP2003243424A2003-08-29
JP2002289528A2002-10-04
Other References:
See also references of EP 1746641A4
None
Attorney, Agent or Firm:
Nakano, Minoru c/o Sumitomo Electric Industries Ltd. (1-3, Shimaya 1-chome, Konohana-k, Osaka-shi Osaka 24, JP)
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