Title:
GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2011/155092
Kind Code:
A1
Abstract:
Disclosed is a method of manufacturing a group III nitride semiconductor laser element that is both capable of improving evenness in a resonator mirror and also allows minimizing of threshold current. The orientations of scribe grooves (65a) of a substrate product (SP) are aligned with the direction in which an edge (71b) of a support device (71) extends, and the substrate product (SP) is positioned with the edge (71b) of the support device (71) used as a reference. The substrate product (SP) is divided into a first region (70a) and a second region (70b), with a reference line (x-coordinate A1) that extends along the edge (71b) as a boundary therebetween. A severance of the substrate product (SP) is carried out by applying pressure to the second region (70b) of the substrate product (SP) while supporting the first region (70a) with a support face (71a), forming another substrate product (SP1) and a laser bar (LB1). The orientation of an edge (69a) of a breaking device (69) is aligned with the direction in which the edge (71b) extends, and the edge (69a) of the breaking device (69) is pressed on the substrate product (SP) from the direction that intersects a second face (63b).
Inventors:
TAKAGI SHIMPEI (JP)
YOSHIZUMI YUSUKE (JP)
KATAYAMA KOJI (JP)
UENO MASAKI (JP)
IKEGAMI TAKATOSHI (JP)
YOSHIZUMI YUSUKE (JP)
KATAYAMA KOJI (JP)
UENO MASAKI (JP)
IKEGAMI TAKATOSHI (JP)
Application Number:
PCT/JP2010/073554
Publication Date:
December 15, 2011
Filing Date:
December 27, 2010
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
TAKAGI SHIMPEI (JP)
YOSHIZUMI YUSUKE (JP)
KATAYAMA KOJI (JP)
UENO MASAKI (JP)
IKEGAMI TAKATOSHI (JP)
TAKAGI SHIMPEI (JP)
YOSHIZUMI YUSUKE (JP)
KATAYAMA KOJI (JP)
UENO MASAKI (JP)
IKEGAMI TAKATOSHI (JP)
International Classes:
H01S5/343
Foreign References:
| JP2010114418A | 2010-05-20 | |||
| JP2010118401A | 2010-05-27 | |||
| JP2002009003A | 2002-01-11 | |||
| JP2006140355A | 2006-06-01 | |||
| JPH02257687A | 1990-10-18 | |||
| JPS61172130U | 1986-10-25 | |||
| JP2009144442A | 2009-07-02 |
Other References:
See also references of EP 2581996A4
JPN. J. APPL. PHYS., vol. 35, 1996, pages L74 - L76
APPL. PHYS. EXPRESS, vol. 1, 2008, pages 091102
JPN. J. APPL. PHYS., vol. 46, 2007, pages L789
JPN. J. APPL. PHYS., vol. 35, 1996, pages L74 - L76
APPL. PHYS. EXPRESS, vol. 1, 2008, pages 091102
JPN. J. APPL. PHYS., vol. 46, 2007, pages L789
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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Claims: