GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND WAFER CONTAINING ELEMENT STRUCTURE

Title:

GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND WAFER CONTAINING ELEMENT STRUCTURE

Document Type and Number:

WIPO Patent Application WO/2016/143574

Kind Code:

A1

Abstract:

[Problem] To provide a technique whereby the current flowing between a p-electrode and an n-electrode is prevented from being concentrated in a region near the end part of a mesa structure, without increasing the number of steps in the production of a light emitting element, and without increasing the operating voltage excessively. [Solution] The invention is a group III nitride semiconductor light emitting element comprising an active layer between an n-type layer and a p-type layer, having an n-electrode on the n-type layer and a p-electrode on the p-type layer, and having a mesa structure containing the p-type layer. In a top view of the group III nitride semiconductor light emitting element, the distance between a portion of an end part of the mesa structure and the periphery of the p-electrode is 1/3 or more of a diffusion length Ls.

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Inventors:

OBATA TOSHIYUKI (JP)
SATOU TOMOAKI (JP)

Application Number:

PCT/JP2016/055992

Publication Date:

September 15, 2016

Filing Date:

February 29, 2016

Export Citation:

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Assignee:

TOKUYAMA CORP (JP)

International Classes:

H01L33/38; H01L33/32

Domestic Patent References:

WO2011033625A1

2011-03-24

Foreign References:

JP2013030817A	2013-02-07
JP2007214569A	2007-08-23

Other References: