Title:
GROUP III-V COMPOUND SEMICONDUCTOR NANOWIRE, FIELD EFFECT TRANSISTOR, AND SWITCHING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2015/064094
Kind Code:
A1
Abstract:
The present invention pertains to a group III-V compound semiconductor nanowire able to be used in a group III-V compound semiconductor MOSFET (FET) operational at a small subthreshold (100 mV/dec or less). A side face of the group III-V compound semiconductor nanowire is a (‒110) plane constituted of a very small (111) plane. The group III-V compound semiconductor nanowire has, e.g., a first layer having a (111)A plane as a side face thereof, and a second layer having a (111)B plane as a side face thereof. The first layer and the second layer are stacked alternatingly in the axial direction.
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Inventors:
FUKUI TAKASHI (JP)
TOMIOKA KATSUHIRO (JP)
TOMIOKA KATSUHIRO (JP)
Application Number:
PCT/JP2014/005463
Publication Date:
May 07, 2015
Filing Date:
October 29, 2014
Export Citation:
Assignee:
UNIV HOKKAIDO NAT UNIV CORP (JP)
JAPAN SCIENCE & TECH AGENCY (JP)
JAPAN SCIENCE & TECH AGENCY (JP)
International Classes:
H01L29/06; B82Y30/00; H01L21/205; H01L21/336; H01L29/04; H01L29/66; H01L29/78
Domestic Patent References:
| WO2011040012A1 | 2011-04-07 |
Foreign References:
| JPH076963A | 1995-01-10 | |||
| JPH0745813A | 1995-02-14 | |||
| JP4966153B2 | 2012-07-04 | |||
| JPH0950058A | 1997-02-18 |
Other References:
H. D. TRINH ET AL.: "The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition A1203/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor", APPL. PHYS. LETT., vol. 97, pages 042903 - 1,042903-3
E. O'CONNOR ET AL.: "A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the A1203/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers", J. APPL. PHYS., vol. 109, pages 024101 - 1,024101-10
Y. D. WU ET AL.: "Engineering of threshold voltages in molecular beam epitaxy-grown A1203/Ga203 (Gd203)/In0.2Ga0.8As", J. VAC. SCI. TECHNOL. B, vol. 28, pages C3H10 - C3H13
ROMAN ENGEL-HERBERT ET AL.: "Metal-oxide-semiconductor capacitors with Zr02 dielectrics grown on In0.53Ga0.47As by chemical beam deposition", APPL. PHYS. LETT., vol. 95, pages 062908 - 1,062908-3
E. O'CONNOR ET AL.: "A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the A1203/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers", J. APPL. PHYS., vol. 109, pages 024101 - 1,024101-10
Y. D. WU ET AL.: "Engineering of threshold voltages in molecular beam epitaxy-grown A1203/Ga203 (Gd203)/In0.2Ga0.8As", J. VAC. SCI. TECHNOL. B, vol. 28, pages C3H10 - C3H13
ROMAN ENGEL-HERBERT ET AL.: "Metal-oxide-semiconductor capacitors with Zr02 dielectrics grown on In0.53Ga0.47As by chemical beam deposition", APPL. PHYS. LETT., vol. 95, pages 062908 - 1,062908-3
Attorney, Agent or Firm:
WASHIDA, KIMIHITO (JP)
Koichi Washida (JP)
Koichi Washida (JP)
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