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Title:
HAFNIUM AMIDE COMPLEX MANUFACTURING METHOD AND HAFNIUM-CONTAINING OXIDE FILM
Document Type and Number:
WIPO Patent Application WO/2010/064524
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a hafnium amide complex represented by general formula: Hf(NR4R5)4, characterized in that a lithium alkylamide represented by general formula: Li(NR4R5) is added to a tertiary hafnium alkoxide complex represented by general formula: Hf[O(CR1R2R3)]4 and reacted, and then reduced-pressure distillation is performed. (In the formulas, R1, R2, and R3 independently represent either a phenyl group, a benzyl group, or a primary, secondary or tertiary alkyl group with carbon number 1-6; and R4 and R5 independently represent either a methyl group or an ethyl group. However, the case where all of R1, R2, and R3 are methyl groups, and the case where one of R1, R2, and R3 is an ethyl group and the other two are methyl groups are excluded.)

Inventors:
RYOKAWA ATSUSHI
YAMADA SHUHEI
Application Number:
PCT/JP2009/069157
Publication Date:
June 10, 2010
Filing Date:
November 11, 2009
Export Citation:
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Assignee:
CENTRAL GLASS CO LTD (JP)
RYOKAWA ATSUSHI
YAMADA SHUHEI
International Classes:
C07C211/65; C23C16/40; C07F7/00
Foreign References:
JP2005263771A2005-09-29
JP2005298467A2005-10-27
JP2005314785A2005-11-10
JP2007051042A2007-03-01
JP2008189550A2008-08-21
US20090005584A12009-01-01
Attorney, Agent or Firm:
HASHIMOTO, Takeshi et al. (JP)
Hashimoto 剛 (JP)
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