Title:
HEMT DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/087955
Kind Code:
A1
Abstract:
A semiconductor device and a manufacturing method therefor, the semiconductor device comprising: a substrate (1); a semiconductor layer (2) provided on the substrate (1) and comprising a first semiconductor lamination layer and a second semiconductor layer provided on the first semiconductor lamination layer, a two-dimensional electron gas being formed at the interface between the first semiconductor lamination layer and the second semiconductor layer; a source electrode (6), a drain electrode (4) and a gate electrode (5) which are arranged on the second semiconductor layer and are arranged at intervals; a conductive layer (7), which is provided in the semiconductor layer (2) and located between the substrate (1) and the two-dimensional electron gas; an electrical coupling structure (57), one end thereof being electrically connected to the gate electrode (5) and the other end extending into the semiconductor layer (2) and being electrically connected to the conductive layer (7); and a high-resistance structure (8) disposed at least partially between the conductive layer (7) and the two-dimensional electron gas and between the electrical coupling structure (57) and the two-dimensional electron gas. The semiconductor device can effectively reduce the electric field intensity of the gate electrode at a high voltage of the semiconductor device, thereby increasing the breakdown voltage of the device.
Inventors:
FANG YUTAO (CN)
WANG QIAN (CN)
YEH NIEN-TZE (CN)
ZHANG JIE (CN)
WANG QIAN (CN)
YEH NIEN-TZE (CN)
ZHANG JIE (CN)
Application Number:
PCT/CN2023/120170
Publication Date:
May 02, 2024
Filing Date:
September 20, 2023
Export Citation:
Assignee:
HUNAN SANAN SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/06; H01L21/335; H01L29/778
Foreign References:
| CN115498020A | 2022-12-20 | |||
| CN115663019A | 2023-01-31 | |||
| US20130153967A1 | 2013-06-20 | |||
| CN112018176A | 2020-12-01 | |||
| CN112368843A | 2021-02-12 |
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (CN)
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