Title:
HETEROATOM-CONTAINING DIAMONDOID TRANSISTORS
Document Type and Number:
WIPO Patent Application WO2004010512
Kind Code:
A9
Abstract:
Novel heterodiamondoids are disclosed. These heterodiamondoids are diamondoids that include heteroatoms in the diamond lattice structure. The heteroatoms may be either electron donating, such that an n-type heterodiamondoid is created, or electron withdrawing, such that a p-type heterodiamondoid is made. Bulk materials may be fabricated from these heterodiamondoids, and the techniques involved include chemical vapor deposition, polymerization, and crystal aggregation. Junctions may be made from the p-type and n-type heterodiamondoid based materials, and microelectronic devices may be made that utilize these junctions. The devices include diodes, bipolar junction transistors, and field effect transistors.
Inventors:
LIU SHENGGAO (US)
DAHL JEREMY E (US)
CARLSON ROBERT M (US)
DAHL JEREMY E (US)
CARLSON ROBERT M (US)
Application Number:
PCT/US2003/022630
Publication Date:
March 18, 2004
Filing Date:
July 17, 2003
Export Citation:
Assignee:
CHEVRON USA INC (US)
LIU SHENGGAO (US)
DAHL JEREMY E (US)
CARLSON ROBERT M (US)
LIU SHENGGAO (US)
DAHL JEREMY E (US)
CARLSON ROBERT M (US)
International Classes:
C07C33/34; C07C35/44; C07C49/423; C07C61/29; C07C69/03; C07C251/44; C07D451/14; C07D487/10; C07D471/22; C07D519/00; C07F5/02; H01L21/04; H01L21/331; H01L21/337; H01L29/66; H01L29/732; H01L29/78; H01L29/808; H01L29/861; H01L51/00; H01L51/05; H01L51/30; (IPC1-7): H01L51/00; C07D451/14; C07D471/08; C07D519/00; C07F5/02
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