Title:
HIGH ASPECT RATIO SHALLOW TRENCH ISOLATION ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2016/074581
Kind Code:
A1
Abstract:
A high aspect ratio shallow trench isolation etching method is provided. The method comprises an etching step comprising a plurality of depth-etching sub-steps, said plurality of depth-etching sub-steps being used for etching the depth of a shallow trench; in each depth-etching sub-step the variable numerical value used for the process parameter representing the amount of reaction byproduct deposit accumulation changes in accordance with a first rule that decreases said amount of accumulation; alternatively, in each depth-etching sub-step the variable numerical value used for the process parameter representing the amount of reaction byproduct deposit changes in accordance with a second rule that alternately increases and decreases said amount of accumulation. The high aspect ratio shallow trench isolation etching method provided simplifies the etching steps without requiring any etching equipment modifications, but still allows for ideal trench etching contours to be achieved. The invention therefore economizes procedure time and reduces etching costs.
Inventors:
FU YALI (CN)
Application Number:
PCT/CN2015/093757
Publication Date:
May 19, 2016
Filing Date:
November 04, 2015
Export Citation:
Assignee:
BEIJING NMC CO LTD (CN)
International Classes:
H01L21/762; H01L21/3065
Foreign References:
| CN103915330A | 2014-07-09 | |||
| CN101459109A | 2009-06-17 | |||
| US20010023960A1 | 2001-09-27 | |||
| CN101911263A | 2010-12-08 | |||
| JP2005244167A | 2005-09-08 | |||
| US6194284B1 | 2001-02-27 |
Attorney, Agent or Firm:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
北京天昊联合知识产权代理有限公司 (CN)
北京天昊联合知识产权代理有限公司 (CN)
Download PDF: