Title:
HIGH COHERENT POWER, TWO-DIMENSIONAL SURFACEEMITTING SEMICONDUCTOR DIODE ARRAY LASER
Document Type and Number:
WIPO Patent Application WO2003063305
Kind Code:
A3
Abstract:
A semiconductor laser is formed on a semiconductor substrate (34) with an array of laterally spaced laser device elements each including a second order distributed feedback grating (22) bounded by distributed Bragg reflector gratings (24) and a central phase shift in the distributed feedback grating (22). The device elements in which the distributed feedback grating (22) and the distributed Bragg reflector gratings (24) are formed have a lower effective index than the index of the interelement regions (51) and are spaced so as to form an antiguided array. A two-dimensional semiconductor array laser may be formed of four or more of the semiconductor array devices arranged on the substrate (34) to provide long range coherent coupling via traveling waves of light between the device elements.
Inventors:
BOTEZ DAN
Application Number:
PCT/US2003/001413
Publication Date:
November 13, 2003
Filing Date:
January 16, 2003
Export Citation:
Assignee:
WISCONSIN ALUMNI RES FOUND (US)
International Classes:
H01S3/00; H01S3/08; H01S5/00; H01S5/125; H01S5/18; H01S5/187; H01S5/42; H01S5/02; H01S5/12; H01S5/343; H01S5/40; (IPC1-7): H01S3/00; H01S5/00
Foreign References:
| US20020196826A1 | 2002-12-26 | |||
| US5617436A | 1997-04-01 | |||
| US20020079485A1 | 2002-06-27 |
Other References:
See also references of EP 1472763A4
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