Title:
HIGH-DENSITY MEMORY DEVICES USING OXIDE GAP FILL
Document Type and Number:
WIPO Patent Application WO/2022/233249
Kind Code:
A1
Abstract:
A semiconductor structure forms two or more tightly pitched memory devices using a dielectric material for a gap fill material. The approach includes providing two adjacent bottom electrodes in a layer of an insulating material and above a metal layer. Two adjacent pillars are each above one of the two adjacent bottom electrodes where each pillar of the two adjacent pillars is composed of a stack of materials for a memory device. A spacer is around the vertical sides each of the two adjacent pillars. The dielectric material is on the spacer around the vertical sides each of the two adjacent pillars, on the layer of the insulating material between the two adjacent bottom electrodes. The dielectric material fills at least a first portion of a gap between the two adjacent pillars. A low k material covers the dielectric material and exposed portions of the layer of the insulating material.
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Inventors:
STANDAERT THEODORUS E (US)
EDELSTEIN DANIEL CHARLES (US)
YANG CHIH-CHAO (US)
EDELSTEIN DANIEL CHARLES (US)
YANG CHIH-CHAO (US)
Application Number:
PCT/CN2022/089031
Publication Date:
November 10, 2022
Filing Date:
April 25, 2022
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L43/02
Foreign References:
| US20210091302A1 | 2021-03-25 | |||
| US20090081862A1 | 2009-03-26 | |||
| US20200066599A1 | 2020-02-27 | |||
| US20190074219A1 | 2019-03-07 | |||
| CN103426809A | 2013-12-04 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
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