Title:
HIGH-DENSITY THREE-DIMENSIONAL LONGITUDINAL MEMORY
Document Type and Number:
WIPO Patent Application WO/2022/111532
Kind Code:
A1
Abstract:
A high-density three-dimensional longitudinal memory (3D-MV), comprising a low doped segment 3D-MV and a non-circular hole 3D-MV. The low doped segment 3D-MV ensures a normal read/write operation of a storage unit by using a longitudinal space (referring to a depth direction along a storage hole) instead of a transverse direction (referring to a radius direction along the storage hole). The non-circular hole 3D-MV comprises a plurality of non-circular storage holes, the cross-section of each non-circular storage hole comprises at least two pairs of intersecting parallel sidelines, and each pair of parallel sidelines are formed by means of single DUV photolithography exposure, and have a minimum spacing less than 50 nanometers.
Inventors:
ZHANG GUOBIAO (CN)
Application Number:
PCT/CN2021/132821
Publication Date:
June 02, 2022
Filing Date:
November 24, 2021
Export Citation:
Assignee:
UNIV SOUTHERN SCI & TECH (CN)
International Classes:
H01L27/11578
Foreign References:
| CN103238215A | 2013-08-07 | |||
| US20080265235A1 | 2008-10-30 | |||
| CN110021610A | 2019-07-16 | |||
| CN103137645A | 2013-06-05 | |||
| CN106158877A | 2016-11-23 |
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (CN)
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