Title:
HIGH-EFFICIENCY LONG-WAVELENGTH LIGHT-EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/204522
Kind Code:
A1
Abstract:
A long-wavelength light-emitting device is disclosed. The long-wavelength light-emitting device comprises: a first conductive semi-conductor layer; an active layer that is located on the first conductive semi-conductor layer and that has a quantum well structure; and a second conductive semi-conductor layer that is located on the active layer. The active layer comprises: one or more well layers including a nitride-based semi-conductor having 21% or more In; two or more barrier layers located in upper and lower parts of the well layers; and one or more upper capping layers located on the well layers, and located between the well layers and the barrier layers, wherein the upper capping layers have a bigger band-gap energy relative to the barrier layers, and the upper capping layers and the well layers are in contact.
Inventors:
YOO HONG JAE (KR)
CHOI HYO SHIK (KR)
LEE HYUNG JU (KR)
CHOI HYO SHIK (KR)
LEE HYUNG JU (KR)
Application Number:
PCT/KR2017/005333
Publication Date:
November 30, 2017
Filing Date:
May 23, 2017
Export Citation:
Assignee:
SEOUL VIOSYS CO LTD (KR)
International Classes:
H01L33/06; H01L33/18; H01L33/26; H01L33/50
Foreign References:
| KR20110091246A | 2011-08-11 | |||
| KR20160022750A | 2016-03-02 | |||
| KR20130007169A | 2013-01-18 | |||
| JP2002223042A | 2002-08-09 | |||
| KR20160022032A | 2016-02-29 | |||
| US20070096077A1 | 2007-05-03 |
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (KR)
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