Title:
HIGH-ELECTRON-MOBILITY TRANSISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/041122
Kind Code:
A1
Abstract:
Provided in the present disclosure are a high-electron-mobility transistor and a preparation method therefor. The high-electron-mobility transistor comprises a substrate, an epitaxial layer, a source electrode, a drain electrode, a gate electrode and a stress compensation layer, wherein the epitaxial layer at least comprises: a first semiconductor layer and a second semiconductor layer, which is arranged on the first semiconductor layer, the first semiconductor layer and the second semiconductor layer being heterostructures; and the source electrode, the drain electrode and the gate electrode are arranged spaced apart from each other on the epitaxial layer, and the gate electrode is arranged between the source electrode and the drain electrode. A stress compensation layer, which has a piezoelectric coefficient opposite to that of a second semiconductor layer, is arranged on the side wall of a gate electrode that faces a drain electrode, such that a reverse piezoelectric stress, which is opposite to that of the second semiconductor layer, can be generated under a high voltage, and stress deformation of the second semiconductor layer under the high voltage is reduced, thereby improving the breakdown electric-field intensity of the second semiconductor layer; and the two-dimensional electron gas concentration on the edge of the gate electrode can also be reduced, and the electric-field intensity on the edge of the gate electrode is adjusted, such that the voltage resistance of a device is improved, and requirements for a multi-stage field plate are reduced, thereby simplifying a preparation process for the device.
Inventors:
FANG YUTAO (CN)
LIU LANG (CN)
YE NIANCI (CN)
ZHANG JIE (CN)
LIU LANG (CN)
YE NIANCI (CN)
ZHANG JIE (CN)
Application Number:
PCT/CN2023/100463
Publication Date:
February 29, 2024
Filing Date:
June 15, 2023
Export Citation:
Assignee:
HUNAN SANAN SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/06; H01L21/335; H01L29/778
Foreign References:
| CN115472671A | 2022-12-13 | |||
| JP2019033200A | 2019-02-28 | |||
| CN114122127A | 2022-03-01 | |||
| CN105870164A | 2016-08-17 | |||
| CN112436056A | 2021-03-02 |
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (CN)
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