Title:
HIGH-FREQUENCY LOAD PIECE BASED ON ALUMINUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/098888
Kind Code:
A2
Abstract:
A high-frequency load piece based on an aluminum nitride substrate and a manufacturing method therefor, the high-frequency load piece comprising an aluminum nitride substrate, a first surface electrode, a second electrode, a resistance layer and a back electrode. The first surface electrode and the second surface electrode are formed separated from one another on an obverse side of the aluminum nitride substrate, and the first surface electrode is connected to the second surface electrode by means of the resistance layer. The back electrode is formed on the reverse side of the aluminum nitride substrate, and the second electrode is connected to the back electrode by means of an electrode terminal formed on an end of the aluminum nitride substrate. The high-frequency load piece of the present invention is able to satisfy the power and electrical requirements for a 10-18 GHz state, the rated power thereof is 20 W, and when the operating frequency is 10-18 GHz, the high-frequency load piece has a relatively low standing wave ratio. In addition, the high-frequency load piece of the present invention is able to match the low operating frequency of 0-10 GHz. On the basis of the manufacturing method for the high-frequency load piece, a thick film process based on an aluminum nitride substrate can be used to manufacture the high-frequency load piece of the present invention. Relative to traditional manufacturing methods for high-frequency load pieces, the manufacturing process of the present invention is simpler.
Inventors:
HONG ZHE (CN)
TANG HAO (CN)
LU DAFU (CN)
XUE WENHUI (CN)
WANG WENJIE (CN)
TANG HAO (CN)
LU DAFU (CN)
XUE WENHUI (CN)
WANG WENJIE (CN)
Application Number:
PCT/CN2020/142576
Publication Date:
May 27, 2021
Filing Date:
December 31, 2020
Export Citation:
Assignee:
SHENZHEN SUNLORD ELECTRONICS (CN)
International Classes:
H01C17/06; H01C7/00; H01P1/22
Attorney, Agent or Firm:
CHINA TRUER IP (CN)
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