HIGH PERFORMANCE FIELD-EFFECT TRANSISTORS

WIPO Patent Application WO/2012/135380

A3

A high performance field-effect transistor includes a substrate, a nanomaterial thin film disposed on the substrate, a source electrode and a drain electrode formed on the nanomaterial thin film, and a channel area defined between the source electrode and the drain electrode. A unitary self-aligned gate electrode extends from the nanomaterial thin film in the channel area between the source electrode and the drain electrode, the gate electrode having an outer dielectric layer and including a foot region and a head region, the foot region in contact with a portion of the nanomaterial thin film in the channel area. A metal layer is disposed over the source electrode, the drain electrode, the head region of the gate electrode, and portions of the nanomaterial thin film proximate the source electrode and the drain electrode in the channel area.

JP2012186439	SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
JP2003051496	ETCHING SOLUTION FOR PATTERNING INDIUM TIN OXIDE, AND MANUFACTURING METHOD FOR LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME ETCHING SOLUTION
JP2001007328	METHOD OF MANUFACTURING SEMICONDUCTOR AND SEMICONDUCTOR DEVICE

ZHOU CHONGWU (US)
BADMAEV ALEXANDER (US)
WANG CHUAN (US)
CHE YUCHI (US)

PCT/US2012/031006

January 03, 2013

March 28, 2012

Click for automatic bibliography generation  

UNIV SOUTHERN CALIFORNIA (US)
ZHOU CHONGWU (US)
BADMAEV ALEXANDER (US)
WANG CHUAN (US)
CHE YUCHI (US)

H01L21/336; B82B3/00; H01L29/78

US7858454B2	2010-12-28
US20080182369A1	2008-07-31
US20090085063A1	2009-04-02
US20030107065A1	2003-06-12

FLANAGAN, Heather L. et al. (P.O. Box 1022Minneapolis, Minnesota, US)

View/Download PDF      PDF Help

Previous Patent: METHOD FOR MODIFYING METAL CAP LAYERS IN SEMICONDUCTOR DEVICES

Next Patent: SYSTEM FOR PROTECTING AGAINST UNDERSEA OIL SPILLS